Maiti, C. K. <br/><br/>
Strain-Engineered MOSFETs 
C. K. Maiti, T. K. Maiti. 
 - 1 online resource (1 p.) 
<br/><br/> Access copy available to the general public. 
<br/><br/> This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization. 
<br/><br/><label>ISBN: </label>9781138075603 
<br/><br/><label>Source: </label>
<br/><br/><label>Subjects--Topical Terms: </label><br/>Technology & Engineering / Electronics / Microelectronics<br/>Technology
<br/><br/><label>Index Terms--Genre/Form: </label><br/>Electronic books.