TY  - BOOK
AU  - Maiti,C.K.
AU  - Maiti,T.K.
TI  - Strain-Engineered MOSFETs
SN  - 9781138075603
PB  - CRC Press
KW  - Technology & Engineering / Electronics / Microelectronics
KW  - bisacsh
KW  - Technology
KW  - Electronic books
N1  - Access copy available to the general public
N2  - This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization
UR  - https://openresearchlibrary.org/content/152c51d6-f4bf-4cd5-a024-68e55668e9c3
ER  -