MARC details
| 000 -LEADER |
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| fixed length control field |
02029nam a22003617a 4500 |
| 001 - CONTROL NUMBER |
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| control field |
102701 |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
KnowledgeUnlatched |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
|---|
| control field |
20210303104949.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS |
|---|
| fixed length control field |
m o d |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION |
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| fixed length control field |
cr u|||||||||| |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
|---|
| fixed length control field |
210129p20122020flu o u00| u eng d |
| 037 ## - SOURCE OF ACQUISITION |
|---|
| Institution to which field applies |
BiblioBoard |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
|---|
| International Standard Book Number |
9781138075603 |
| 029 1# - OTHER SYSTEM CONTROL NUMBER (OCLC) |
|---|
| OCLC library identifier |
https://library.biblioboard.com/ext/api/media/152c51d6-f4bf-4cd5-a024-68e55668e9c3/assets/thumbnail.jpg |
| 040 ## - CATALOGING SOURCE |
|---|
| Original cataloging agency |
ScCtBLL |
| Transcribing agency |
ScCtBLL |
| 100 1# - MAIN ENTRY--PERSONAL NAME |
|---|
| Personal name |
Maiti, C. K. |
| Relator term |
author. |
| 245 00 - TITLE STATEMENT |
|---|
| Title |
Strain-Engineered MOSFETs |
| Statement of responsibility, etc. |
C. K. Maiti, T. K. Maiti. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
|---|
| Name of producer, publisher, distributor, manufacturer |
CRC Press, |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
1 online resource (1 p.) |
| 506 0# - RESTRICTIONS ON ACCESS NOTE |
|---|
| Terms governing access |
Access copy available to the general public. |
| Standardized terminology for access restriction |
Unrestricted |
| Source of term |
star |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc. |
This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization. |
| 588 0# - SOURCE OF DESCRIPTION NOTE |
|---|
| Source of description note |
Description based on print version record. |
| 590 ## - LOCAL NOTE (RLIN) |
|---|
| Local note |
KU Select 2018: STEM Backlist Books |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Technology & Engineering / Electronics / Microelectronics |
| Source of heading or term |
bisacsh |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Technology |
| 655 #0 - INDEX TERM--GENRE/FORM |
|---|
| Genre/form data or focus term |
Electronic books. |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Maiti, T. K. |
| Relator term |
author. |
| 758 ## - |
|---|
| -- |
Is found in: |
| -- |
Knowledge Unlatched |
| -- |
https://openresearchlibrary.org/module/2774bc74-146a-484f-a7ba-ab1d6a09bbfb |
| 856 40 - ELECTRONIC LOCATION AND ACCESS |
|---|
| Uniform Resource Identifier |
<a href="https://openresearchlibrary.org/content/152c51d6-f4bf-4cd5-a024-68e55668e9c3">https://openresearchlibrary.org/content/152c51d6-f4bf-4cd5-a024-68e55668e9c3</a> |
| Public note |
View this content on Open Research Library. |
| -- |
0 |
